VS6018BS Datasheet | Vanguard Semiconductor

Features - N-Channel，5V Logic Level Control - Enhancement mode - Low on-resistance RDS(on) @ VGS=4.5 V - 100% Avalanche test - Pb-free lead plating; Ro HS pliant 65V/17A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 65 V 6.7 mΩ 7.9 mΩ 17 A SOP8 Part ID VS6018BS Package Type SOP8 Marking 6018BS Tape and reel information 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM EAS PD VGS Pulse drain current tested ① Avalanche energy, single pulsed ② Maximum power dissipation Gate-Source voltage TA =25°C TA =25°C TA =100°C TA =25°C TA =25°C TSTG TJ Storage and operating temperature range Thermal Characteristics Symbol Parameter RθJL Rθ JA Thermal Resistance-Junction to Lead Thermal Resistance-Junction to Ambient Rating 65 2.6 17 11 68...