VS6018BTD Datasheet | Vanguard Semiconductor

Features - N-Channel，5V Logic Level Control - Enhancement mode - Very low on-resistance RDS(on) @ VGS=4.5V - 100% Avalanche test - Pb-free lead plating; Ro HS pliant 65V/95A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10V R @ DS(on),TYP VGS=4.5V ID 6.3 mΩ 7.6 mΩ TO-263 Part ID VS6018BTD Package Type TO-263 Marking 6018BTD Tape and reel information 1000PCS/Reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage IS ID IDM IDSM EAS PDSM Diode continuous forward current Continuous drain current @VGS=10V Pulse drain current tested ① Continuous drain current @VGS=10V Avalanche energy, single pulsed ② Maximum power dissipation Maximum power dissipation ③ TC =25°C TC =25°C TC =100°C TC =25°C TA=25°C TA=70°C TC =25°C TA=25°C TSTG , TJ Storage and Junction Temperature...