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Vanguard Semiconductor

VS6058AD Datasheet Preview

VS6058AD Datasheet

60V/52A N-Channel Advanced Power MOSFET

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Features
N-Channel
Enhancement mode
Very low on-resistance RDS(on) @ VGS=4.5 V
Fast Switching
100% Avalanche test
Pb-free lead plating; RoHS compliant
VS6058AD
60V/52A N-Channel Advanced Power MOSFET
V DS
R @DS(on),TYP VGS=4.5 V
ID
60 V
12 m
52 A
TO-252
Part ID
VS6058AD
Package Type
TO-252
Marking
6058AD
Tape and reel
information
2500pcs/reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage
Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM
EAS
Pulse drain current tested
Avalanche energy, single pulsed
TC =25°C
TC =25°C
TC =70°C
TC =25°C
ID=40A
IAS Avalanche energy, single pulsed
PD Maximum power dissipation
VGS Gate-Source voltage
TSTG TJ
Storage and operating temperature range
Thermal Characteristics
TC =25°C
Symbol
RJC
RJA
Parameter
Thermal Resistance-Junction to Case
Thermal Resistance Junction-Ambient
Rating
60
52
52
31
208
240
40
30
±20
-55 to 175
Typical
5
72
Unit
V
A
A
A
A
mJ
A
W
V
°C
Unit
°C/W
°C/W
CopyrightVanguard Semiconductor Co., Ltd
Rev A – May.15th, 2015
www.vgsemi.com




Vanguard Semiconductor

VS6058AD Datasheet Preview

VS6058AD Datasheet

60V/52A N-Channel Advanced Power MOSFET

No Preview Available !

VS6058AD
60V/52A N-Channel Advanced Power MOSFET
Symbol
Parameter
Condition
Min. Typ. Max. Unit
Static Electrical Characteristics @ TC = 25°C (unless otherwise stated)
V(BR)DSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Zero Gate Voltage Drain Current(Tc=125)
VGS=0V ID=250μA
VDS=48V,VGS=0V
VDS=48V,VGS=0V
60
--
--
-- --
V
-- 1 μA
-- 100 μA
IGSS Gate-Body Leakage Current
VGS=±20V,VDS=0V
--
VGS(TH)
Gate Threshold Voltage
VDS=VGS,ID=250μA 1.0
RDS(ON)
Drain-Source On-State Resistance
VGS=10V, ID=8A
--
RDS(ON)
Drain-Source On-State Resistance
VGS=4.5V, ID=4A
--
Dynamic Electrical Characteristics @ T C= 25°C (unless otherwise stated)
--
1.8
11
12
Ciss
Coss
Crss
Qg
Qgs
Qgd
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
VDS=25V,VGS=0V,
f=1MHz
VDS=25V,ID=4A,
VGS=10V
VGS=0V, f=1MHz
-- 2250
-- 220
-- 165
-- 58
-- 5.9
-- 14.5
-- 1.2
±100
3.0
14
16
--
--
--
--
--
--
--
nA
V
m
m
pF
pF
pF
nC
nC
nC
Switching Characteristics
t d(on)
tr
t d(off)
tf
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=25V,
ID=4A,
RG=6.8,
VGS=10V
-- 20
-- 98
-- 46
-- 91
Source- Drain Diode Characteristics@ TC = 25°C (unless otherwise stated)
--
--
--
--
nS
nS
nS
nS
VSD
trr
Qrr
NOTE:
Forward on voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=8A,VGS=0V
Tj=25,Isd=4A,
VGS=0V
di/dt=100A/μs
-- 0.78 1.2
-- 20 --
13
V
nS
nC
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.3mH,RG = 25, IAS = 40A, VGS =10V. Part not recommended for use above this value
Pulse width 300μs; duty cycle2%.
CopyrightVanguard Semiconductor Co., Ltd
Rev A – May.15th, 2015
www.vgsemi.com


Part Number VS6058AD
Description 60V/52A N-Channel Advanced Power MOSFET
Maker Vanguard Semiconductor
Total Page 5 Pages
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