VS6411AS Datasheet | Vanguard Semiconductor

Features - Enhancement mode - Low on-resistance RDS(on) @ VGS=4.5 V - Vito MOS® Technology - Fast Switching and High efficiency - Pb-free lead plating; Ro HS pliant - MSL:Level 1 pliant 60V/11A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID 12 mΩ 14 mΩ SOP8 Part ID VS6411AS Package Type SOP8 Marking 6411AS Tape and reel information 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage Diode continuous forward current Continuous drain current @VGS=10V Pulse drain current tested ① Avalanche energy, single pulsed ② Maximum power dissipation TSTG , TJ Storage and Junction Temperature Range Thermal Characteristics Symbol Parameter...