• Part: VSD080N06MS
  • Description: N-Channel Advanced Power MOSFET
  • Manufacturer: Vanguard Semiconductor
  • Size: 272.52 KB
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Datasheet Summary

Features - N-Channel - Enhancement mode - Very low on-resistance @ VGS=4.5 V - Fast Switching - Pb-free lead plating; RoHS pliant 60V/15A N-Channel Advanced Power MOSFET V DS R DS(on),typ@VGS=10V R DS(on),typ@VGS=4.5V ID 60 V 68 mΩ 85 mΩ 15 A TO-252 Part ID Package Type TO-252 Marking 080N06 Tape and reel information 2500pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage IDM PD IS EAS TJ TSTG Continuous drain current@VGS=10V Pulse drain current tested ① Maximum power dissipation Diode Continuous Forward Current Avalanche energy, single pulsed ②...