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Vanguard Semiconductor

VSD080N06MS Datasheet Preview

VSD080N06MS Datasheet

N-Channel Advanced Power MOSFET

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Features
N-Channel
Enhancement mode
Very low on-resistance @ VGS=4.5 V
Fast Switching
Pb-free lead plating; RoHS compliant
VSD080N06MS
60V/15A N-Channel Advanced Power MOSFET
V DS
R DS(on),typ@VGS=10V
R DS(on),typ@VGS=4.5V
ID
60 V
68 m
85 m
15 A
TO-252
Part ID
Package Type
VSD080N06MS
TO-252
Marking
080N06
Tape and reel
information
2500pcs/reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
VGS
Drain-Source breakdown voltage
Gate-Source voltage
ID
IDM
PD
IS
EAS
TJ
TSTG
Continuous drain current@VGS=10V
Pulse drain current tested
Maximum power dissipation
Diode Continuous Forward Current
Avalanche energy, single pulsed
Maximum Junction Temperature
Storage and operating temperature range
TC =25°C
TA =70°C
TC =25°C
TC =25°C
TC =25°C
ID=10A
Thermal characteristics
RJA Thermal Resistance Junction-Ambient
RJC Thermal Resistance-Junction to Case
Rating
60
±16
15
9.6
35
30
15
5
175
-55 to 175
60
5
Unit
V
V
A
A
A
W
A
mJ
°C
°C
°C/W
°C/W
CopyrightVanguard Semiconductor Co., Ltd
Rev. A– Nov.18th, 2015
Page - 1 - Total 5
www.vgsemi.com




Vanguard Semiconductor

VSD080N06MS Datasheet Preview

VSD080N06MS Datasheet

N-Channel Advanced Power MOSFET

No Preview Available !

Typical Electrical Characteristics
VSD080N06MS
60V/15A N-Channel Advanced Power MOSFET
Symbol
Parameter
Condition
Min. Typ. Max. Unit
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
V(BR)DSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Zero Gate Voltage Drain Current(Tc=125)
VGS=0V ID=250μA
VDS=60V,VGS=0V
VDS=60V,VGS=0V
60
--
--
-- --
V
-- 1 μA
-- 100 μA
IGSS
VGS(TH)
RDS(ON)
RDS(ON)
gfs
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
VGS=±16V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=10A
VGS=4.5V, ID=5A
VDS= 15V, ID=1.8A
--
1.0
--
--
3
-- ±100 nA
2.0 3.0
V
68 80 m
85 100 m
-- --
S
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Ciss
Coss
Crss
Qg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Switching Characteristics
-- 435 --
VDS=30V,VGS=0V,
-- 40 --
f=1MHz
-- 28 --
VDS=30V,ID=1A,
VGS=10V
-- 6 --
-- 1.7 --
-- 1.5 --
pF
pF
pF
nC
nC
nC
t d(on)
tr
t d(off)
tf
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=30V,
ID=1A,
RG=6.8,
VGS=4.5V
-- 6
-- 15
-- 16
-- 10
Source- Drain Diode Characteristics@ TJ = 25°C (unless otherwise stated)
--
--
--
--
nS
nS
nS
nS
VSD
NOTE:
Forward on voltage
ISD=10A,VGS=0V
-- 0.95 1.20
V
Repetitive rating; pulse width limited by max. junction temperature
Limited by TJmax, starting TJ = 25°C, L = 0.1mH,RG = 25, IAS = 10A, VGS =10V. Part not recommended for use above this value.
Pulse width 300μs; duty cycle2%.
.
CopyrightVanguard Semiconductor Co., Ltd
Rev. A– Nov.18th, 2015
Page - 2 - Total 5
www.vgsemi.com


Part Number VSD080N06MS
Description N-Channel Advanced Power MOSFET
Maker Vanguard Semiconductor
Total Page 5 Pages
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