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VSD003N06HS - N-Channel Advanced Power MOSFET

Key Features

  • N-Channel，10V Logic Level Control.
  • Enhancement mode.
  • Very low on-resistance.
  • Fast Switching.
  • 100% Avalanche Tested.
  • Pb-free lead plating; RoHS compliant VSD003N06HS 60V/140A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V ID 60 V 4.0 mΩ 140 A TO-252 Part ID VSD003N06HS Package Type TO-252 Marking 003N06H Tape and reel information 2500pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source.

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Datasheet Details

Part number VSD003N06HS
Manufacturer Vanguard Semiconductor
File Size 350.62 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VSD003N06HS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features  N-Channel，10V Logic Level Control  Enhancement mode  Very low on-resistance  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSD003N06HS 60V/140A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V ID 60 V 4.0 mΩ 140 A TO-252 Part ID VSD003N06HS Package Type TO-252 Marking 003N06H Tape and reel information 2500pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① IAS Avalanche current TC =25°C TC =25°C TC =100°C TC =25°C L=0.