• Part: VSD006N08MS
  • Description: N-Channel Advanced Power MOSFET
  • Manufacturer: Vanguard Semiconductor
  • Size: 329.69 KB
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Datasheet Summary

Features - N-Channel,5V Logic Level Control - Enhancement mode - Very low on-resistance RDS(on) @ VGS=4.5 V - 100% Avalanche test - Pb-free lead plating; RoHS pliant 80V/85A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 80 V 5.8 mΩ 7.0 mΩ 85 A TO-252 Part ID VSD006N08MS Package Type TO-252 Marking 006N08M Tape and reel information 2500PCS/Reel Maximum ratings, at T j=25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TC...