• Part: VSE008NE2LS
  • Description: N-Channel Advanced Power MOSFET
  • Manufacturer: Vanguard Semiconductor
  • Size: 591.56 KB
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Datasheet Summary

Features - N-Channel,3.3V Logic Level Control - Low RDS(on) and High Efficiency - Fast Switching - Enhancement mode - 100% Avalanche test - Pb-free lead plating; RoHS pliant 25V/55A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 25 V 5.8 mΩ 6.6 mΩ 55 A PDFN3333 Part ID VSE008NE2LS Package Type PDFN3333 Marking 008NE2L Tape and reel information 5000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=4.5V IDM Pulse drain current tested ① IDSM Continuous drain...