• Part: VSO100N10MD
  • Description: Dual N-Channel Advanced Power MOSFET
  • Manufacturer: Vanguard Semiconductor
  • Size: 614.61 KB
Download VSO100N10MD Datasheet PDF
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Datasheet Summary

100V/3.7A Dual N-Channel Advanced Power MOSFET Features - Dual N-Channel,5V Logic Level Control - Enhancement mode - Fast Switching - High Effective - Pb-free lead plating; RoHS pliant; Halogen-Free V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 100 V 76 mΩ 81 mΩ 3.7 A SOP8 Part ID VSO100N10MD Package Type SOP8 Marking 100N10MD Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ① PD Maximum power dissipation VGS Gate-Source voltage TA =25°C TA...