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VSO100P06MD - Dual P-Channel Advanced Power MOSFET

Key Features

  • Dual P-Channel,-5V Logic Level Control.
  • Enhancement mode.
  • Very low on-resistance RDS(on) @ VGS=-4.5 V.
  • Fast Switching.
  • High Effective.
  • Pb-free lead plating; RoHS compliant; Hg-Free V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5 V ID -60 70 85 -4.6 V mΩ mΩ A SOP8 Part ID VSO100P06MD Package Type SOP8 Marking 100P06MD Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-S.

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Datasheet Details

Part number VSO100P06MD
Manufacturer Vanguard Semiconductor
File Size 437.32 KB
Description Dual P-Channel Advanced Power MOSFET
Datasheet download datasheet VSO100P06MD Datasheet

Full PDF Text Transcription for VSO100P06MD (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for VSO100P06MD. For precise diagrams, and layout, please refer to the original PDF.

VSO100P06MD -60V/-4.6A Dual P-Channel Advanced Power MOSFET Features  Dual P-Channel,-5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=-4...

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l Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  High Effective  Pb-free lead plating; RoHS compliant; Hg-Free V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5 V ID -60 70 85 -4.