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Vanguard Semiconductor

VSP003N04MS-G Datasheet Preview

VSP003N04MS-G Datasheet

N-Channel Advanced Power MOSFET

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Features
Enhancement mode
Low on-resistance RDS(on) @ VGS=4.5 V
VitoMOS® Technology
100% Avalanche test
Pb-free lead plating; RoHS compliant
VSP003N04MS-G
40V/110A N-Channel Advanced Power MOSFET
V DS
R @ DS(on),TYP VGS=10 V
R @ DS(on),TYP VGS=4.5 V
ID
40
V
2.3 mΩ
3.4 mΩ
110 A
PDFN5x6
Part ID
VSP003N04MS-G
Package Type
PDFN5x6
Marking
003N04M
Tape and reel
information
3000PCS/Reel
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS Drain-Source breakdown voltage
VGS
Gate-Source voltage
IS
ID
IDM
IDSM
Diode continuous forward current
Continuous drain current @VGS=10V
Pulse drain current tested
Continuous drain current @VGS=10V
TC =25°C
TC =25°C
TC =100°C
TC =25°C
TA=25°C
TA=70°C
EAS
Avalanche energy, single pulsed
PD
Maximum power dissipation
PDSM
Maximum power dissipation
TC =25°C
TC =100°C
TA=25°C
TA=70°C
TSTG,TJ Storage and Junction Temperature Range
Thermal Characteristics
Symbol
Parameter
Typical
RθJC
Thermal Resistance, Junction-to-Case
2.85
RθJA
Thermal Resistance, Junction-to-Ambient
30
Rating
40
±20
110
110
69
440
34
27
45
44
17.5
4.2
2.7
-55 to 150
Max
3.4
36
Unit
V
V
A
A
A
A
A
A
mJ
W
W
W
W
°C
Unit
°C/W
°C/W
CopyrightVanguard Semiconductor Co., Ltd
Rev A AUG, 2020
www.vgsemi.com




Vanguard Semiconductor

VSP003N04MS-G Datasheet Preview

VSP003N04MS-G Datasheet

N-Channel Advanced Power MOSFET

No Preview Available !

Electrical Characteristics
Symbol
Parameter
VSP003N04MS-G
40V/110A N-Channel Advanced Power MOSFET
Condition
Min. Typ. Max. Unit
Static Electrical Characteristics @ Tj=25°C (unless otherwise stated)
V(BR)DSS Drain-Source Breakdown Voltage
VGS=0V, ID=250μA
40
--
--
V
IDSS
IGSS
Zero Gate Voltage Drain Current
VDS=40V,VGS=0V
--
Zero Gate Voltage Drain Current( Tj =125) VDS=40V,VGS=0V
--
Gate-Body Leakage Current
VGS=±20V,VDS=0V
--
--
1
μA
--
100
μA
--
±100
nA
VGS(th)
Gate Threshold Voltage
VDS=VGS,ID=250μA 1.3
1.7
2.5
V
RDS(on) Drain-Source On-State Resistance
RDS(on) Drain-Source On-State Resistance
VGS=10V, ID=40A
--
2.3
3
Tj =100
--
2.8
--
VGS=4.5V, ID=30A
--
3.4
4.4
Dynamic Electrical Characteristics @ Tj = 25°C (unless otherwise stated)
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1830 2440 3245
pF
VDS=20V,VGS=0V,
615 820 1090
pF
f=1MHz
65
85
115
pF
Rg
Gate Resistance
f=1MHz
0.2
1.9
3
Ω
Qg(10V) Total Gate Charge
--
47
62.5
nC
Qg(4.5V) Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V,ID=40A,
--
24
32
nC
VGS=10V
--
7.8 10.4
nC
Qgd
Gate-Drain Charge
--
10.6
16
nC
Switching Characteristics
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=20V,
ID=40A,
RG=3Ω,
VGS=10V
--
8.2
--
ns
--
78
--
ns
--
37
--
ns
--
28
--
ns
Source- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated)
VSD
Forward on voltage
ISD=40A,VGS=0V
--
0.8
1.2
V
Trr
Reverse Recovery Time
Tj=25,Isd=40A,
--
32
64
ns
Qrr
Reverse Recovery Charge
VGS=0V
di/dt=100A/μs
--
16
32
nC
NOTE: Repetitive rating; pulse width limited by max junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.1mH, RG = 25Ω, IAS = 30A, VGS =10V. Part not recommended for use above this value
The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C.
Pulse width ≤ 380μs; duty cycle≤ 2%.
CopyrightVanguard Semiconductor Co., Ltd
Rev A AUG, 2020
www.vgsemi.com


Part Number VSP003N04MS-G
Description N-Channel Advanced Power MOSFET
Maker Vanguard Semiconductor
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