VSP003N04MS-G Datasheet | Vanguard Semiconductor

Features - Enhancement mode - Low on-resistance RDS(on) @ VGS=4.5 V - Vito MOS® Ⅱ Technology - 100% Avalanche test - Pb-free lead plating; Ro HS pliant 40V/110A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID 2.3 mΩ 3.4 mΩ 110 A PDFN5x6 Part ID VSP003N04MS-G Package Type PDFN5x6 Marking 003N04M Tape and reel information 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage IS ID IDM IDSM Diode continuous forward current Continuous drain current @VGS=10V Pulse drain current tested ① Continuous drain current @VGS=10V TC =25°C TC =25°C TC =100°C TC =25°C TA=25°C TA=70°C Avalanche energy, single pulsed ② Maximum power dissipation PDSM Maximum power dissipation ③ TC =25°C TC =100°C TA=25°C TA=70°C TSTG,TJ Storage and Junction Temperature Range Thermal Characteristics Symbol Parameter...