Datasheet4U Logo Datasheet4U.com

VSP003N06HS - N-Channel Advanced Power MOSFET

Key Features

  • N-Channel，10V Logic Level Control.
  • Enhancement mode.
  • Very low on-resistance.
  • Fast Switching.
  • 100% Avalanche Tested.
  • Pb-free lead plating; RoHS compliant VSP003N06HS 60V/120A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V ID 60 V 4.4 mΩ 120 A PDFN5x6 Part ID VSP003N06HS Package Type PDFN5x6 Marking 003N06H Tape and reel information 3000pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Sourc.

📥 Download Datasheet

Datasheet Details

Part number VSP003N06HS
Manufacturer Vanguard Semiconductor
File Size 368.96 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VSP003N06HS Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
VSP003N04HS-G 40V/33A N-Channel Advanced Power MOSFET Vergiga
VSP007N06MS N-Channel 60V MOSFET VBsemi
VSP009N10MS N-Channel 100V MOSFET VBsemi
VSP012N12MS-G 120V/42A N-Channel Advanced Power MOSFET Vergiga
VSP VSP Series High-power programmable power supplies Adaptive

Other Datasheets by Vanguard Semiconductor

Part Number Description
VSP003N06MS-G N-Channel Advanced Power MOSFET
VSP003N04MS-G N-Channel Advanced Power MOSFET
VSP003N10HS-G N-Channel Advanced Power MOSFET
VSP002N06HS-G N-Channel Advanced Power MOSFET
VSP002N06MS-G N-Channel Advanced Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features  N-Channel，10V Logic Level Control  Enhancement mode  Very low on-resistance  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSP003N06HS 60V/120A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V ID 60 V 4.4 mΩ 120 A PDFN5x6 Part ID VSP003N06HS Package Type PDFN5x6 Marking 003N06H Tape and reel information 3000pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① IAS Avalanche current max TC =25°C TC =25°C TC =100°C TC =25°C L=0.