Datasheet4U Logo Datasheet4U.com

VSP002N06MS-G - N-Channel Advanced Power MOSFET

Key Features

  • Enhancement mode.
  • Low on-resistance RDS(on) @ VGS=4.5 V.
  • VitoMOS® Ⅱ Technology.
  • Fast Switching and High efficiency.
  • Pb-free lead plating; RoHS compliant VSP002N06MS-G 60V/200A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID 60 V 1.9 mΩ 2.9 mΩ 200 A PDFN5x6 Part ID Package Type VSP002N06MS-G PDFN5x6 Marking 002N06MG Tape and reel information 3000pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symb.

📥 Download Datasheet

Datasheet Details

Part number VSP002N06MS-G
Manufacturer Vanguard Semiconductor
File Size 711.61 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VSP002N06MS-G Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
VSP003N04HS-G 40V/33A N-Channel Advanced Power MOSFET Vergiga
VSP007N06MS N-Channel 60V MOSFET VBsemi
VSP009N10MS N-Channel 100V MOSFET VBsemi
VSP012N12MS-G 120V/42A N-Channel Advanced Power MOSFET Vergiga
VSP VSP Series High-power programmable power supplies Adaptive

Other Datasheets by Vanguard Semiconductor

Part Number Description
VSP002N06HS-G N-Channel Advanced Power MOSFET
VSP002P02KS P-Channel Advanced Power MOSFET
VSP003N04MS-G N-Channel Advanced Power MOSFET
VSP003N06HS N-Channel Advanced Power MOSFET
VSP003N06MS-G N-Channel Advanced Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Ⅱ Technology  Fast Switching and High efficiency  Pb-free lead plating; RoHS compliant VSP002N06MS-G 60V/200A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID 60 V 1.9 mΩ 2.