VSP002N06MS-G Description
Features Enhancement mode Low on-resistance RDS(on) @ VGS=4.5 V VitoMOS® Ⅱ Technology Fast Switching and High efficiency Pb-free lead plating; Symbol Parameter VSP002N06MS-G 60V/200A N-Channel Advanced Power MOSFET Condition Min. Forward on voltage Reverse Recovery Time Reverse Recovery Charge ISD=40A,VGS=0V Tj=25℃,Isd=40A, VGS=0V di/dt=100A/μs -- 0.8 1.2.
VSP002N06MS-G Key Features
- Enhancement mode
- Low on-resistance RDS(on) @ VGS=4.5 V
- VitoMOS® Ⅱ Technology
- Fast Switching and High efficiency
- Pb-free lead plating; RoHS pliant
- JAN, 2020