VSP002N06MS-G
VSP002N06MS-G is N-Channel Advanced Power MOSFET manufactured by Vanguard Semiconductor.
Features
- Enhancement mode
- Low on-resistance RDS(on) @ VGS=4.5 V
- VitoMOS® Ⅱ Technology
- Fast Switching and High efficiency
- Pb-free lead plating; RoHS pliant
60V/200A N-Channel Advanced Power MOSFET
V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID
1.9 mΩ
2.9 mΩ
200 A
PDFN5x6
Part ID
Package Type
PDFN5x6
Marking 002N06MG
Tape and reel information
3000pcs/Reel
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
Drain-Source breakdown voltage Gate-Source voltage
IS ID IDM
IDSM EAS
Diode continuous forward current Continuous drain current @VGS=10V
Pulse drain current tested ①
Continuous...