• Part: VSP002N06MS-G
  • Description: N-Channel Advanced Power MOSFET
  • Manufacturer: Vanguard Semiconductor
  • Size: 711.61 KB
Download VSP002N06MS-G Datasheet PDF
Vanguard Semiconductor
VSP002N06MS-G
VSP002N06MS-G is N-Channel Advanced Power MOSFET manufactured by Vanguard Semiconductor.
Features - Enhancement mode - Low on-resistance RDS(on) @ VGS=4.5 V - VitoMOS® Ⅱ Technology - Fast Switching and High efficiency - Pb-free lead plating; RoHS pliant 60V/200A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID 1.9 mΩ 2.9 mΩ 200 A PDFN5x6 Part ID Package Type PDFN5x6 Marking 002N06MG Tape and reel information 3000pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage IS ID IDM IDSM EAS Diode continuous forward current Continuous drain current @VGS=10V Pulse drain current tested ① Continuous...