VSP002N06HS-G
VSP002N06HS-G is manufactured by Vanguard Semiconductor.
Features
- Enhancement mode
- Low on-resistance RDS(on) @ VGS=10 V
- VitoMOS® Ⅱ Technology
- 100% Avalanche test
- Pb-free lead plating; RoHS pliant
60V/190A N-Channel Advanced Power MOSFET
V DS R @ DS(on),TYP VGS=10 V ID
2.1 mΩ
190 A
PDFN5060X
Part ID VSP002N06HS-G
Package Type PDFN5060X
Marking 002N06HG
Tape and reel information
3000PCS/Reel
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS Drain-Source breakdown voltage
VGS IS ID IDM IDSM EAS PD
Gate-Source voltage Diode continuous forward current Continuous drain current @VGS=10V
Pulse drain current tested ①
Continuous drain current @VGS=10V
Avalanche energy,...