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VSP002N06HS-G - N-Channel Advanced Power MOSFET

Key Features

  • Enhancement mode.
  • Low on-resistance RDS(on) @ VGS=10 V.
  • VitoMOS® Ⅱ Technology.
  • 100% Avalanche test.
  • Pb-free lead plating; RoHS compliant VSP002N06HS-G 60V/190A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V ID 60 V 2.1 mΩ 190 A PDFN5060X Part ID VSP002N06HS-G Package Type PDFN5060X Marking 002N06HG Tape and reel information 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown.

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Datasheet Details

Part number VSP002N06HS-G
Manufacturer Vanguard Semiconductor
File Size 1.05 MB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VSP002N06HS-G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=10 V  VitoMOS® Ⅱ Technology  100% Avalanche test  Pb-free lead plating; RoHS compliant VSP002N06HS-G 60V/190A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V ID 60 V 2.