• Part: VSP002N06HS-G
  • Description: N-Channel Advanced Power MOSFET
  • Manufacturer: Vanguard Semiconductor
  • Size: 1.05 MB
Download VSP002N06HS-G Datasheet PDF
Vanguard Semiconductor
VSP002N06HS-G
VSP002N06HS-G is manufactured by Vanguard Semiconductor.
Features - Enhancement mode - Low on-resistance RDS(on) @ VGS=10 V - VitoMOS® Ⅱ Technology - 100% Avalanche test - Pb-free lead plating; RoHS pliant 60V/190A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V ID 2.1 mΩ 190 A PDFN5060X Part ID VSP002N06HS-G Package Type PDFN5060X Marking 002N06HG Tape and reel information 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage VGS IS ID IDM IDSM EAS PD Gate-Source voltage Diode continuous forward current Continuous drain current @VGS=10V Pulse drain current tested ① Continuous drain current @VGS=10V Avalanche energy,...