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Vanguard Semiconductor

VSP003N06MS-G Datasheet Preview

VSP003N06MS-G Datasheet

N-Channel Advanced Power MOSFET

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Features
Enhancement mode
Low on-resistance RDS(on) @ VGS=4.5 V
VitoMOS® Technology
100% Avalanche test
Pb-free lead plating; RoHS compliant
VSP003N06MS-G
60V/125A N-Channel Advanced Power MOSFET
V DS
R @ DS(on),TYP VGS=10 V
R @ DS(on),TYP VGS=4.5 V
ID
60
V
2.5 mΩ
4.3 mΩ
125 A
PDFN5x6
Part ID
VSP003N06MS-G
Package Type
PDFN5x6
Marking
003N06M
Tape and reel
information
3000PCS/Reel
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
VGS
IS
Drain-Source breakdown voltage
Gate-Source voltage
Diode continuous forward current
ID
Continuous drain current @VGS=10V
IDM
Pulse drain current tested
IDSM
Continuous drain current @VGS=10V
EAS
Avalanche energy, single pulsed
PD
PDSM
Maximum power dissipation
Maximum power dissipation
TSTG , TJ Storage and Junction Temperature Range
Thermal Characteristics
Symbol
Parameter
RJC
Thermal Resistance, Junction-to-Case
RJA
Thermal Resistance, Junction-to-Ambient
TC =25°C
TC =25°C
TC =100°C
TC =25°C
TA=25°C
TA=70°C
TC =25°C
TA=25°C
Rating
60
±20
125
125
79
500
31
24
100
69
4.2
-55 to 150
Typical
1.8
30
Unit
V
V
A
A
A
A
A
A
mJ
W
W
°C
Unit
°C/W
°C/W
CopyrightVanguard Semiconductor Co., Ltd
Rev A DEC, 2019
www.vgsemi.com




Vanguard Semiconductor

VSP003N06MS-G Datasheet Preview

VSP003N06MS-G Datasheet

N-Channel Advanced Power MOSFET

No Preview Available !

Electrical Characteristics
Symbol
Parameter
VSP003N06MS-G
60V/125A N-Channel Advanced Power MOSFET
Condition
Min. Typ. Max. Unit
Static Electrical Characteristics @ Tj=25°C (unless otherwise stated)
V(BR)DSS Drain-Source Breakdown Voltage
VGS=0V, ID=250μA
60
--
--
V
Zero Gate Voltage Drain Current
VDS=60V,VGS=0V
--
--
1
μA
IDSS
Zero Gate Voltage Drain Current( Tj =125) VDS=60V,VGS=0V
--
--
100
μA
IGSS
Gate-Body Leakage Current
VGS=±20V,VDS=0V
--
--
±100
nA
VGS(TH)
Gate Threshold Voltage
VDS=VGS,ID=250μA 1.3
1.9
2.5
V
RDS(ON) Drain-Source On-State Resistance
RDS(ON)
Drain-Source On-State Resistance
VGS=10V, ID=30A
--
2.5
3.5
Tj =100
--
3.2
--
VGS=4.5V, ID=20A
--
4.3
6
Dynamic Electrical Characteristics @ Tj = 25°C (unless otherwise stated)
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
Qg (10V) Total Gate Charge
Qg (4.5V) Total Gate Charge
Q gs
Gate-Source Charge
Q gd
Gate-Drain Charge
Switching Characteristics
3020 3550 4080
pF
VDS=30V,VGS=0V,
1355 1595 1835
pF
f=1MHz
25
35
45
pF
f=1MHz
--
0.8
--
Ω
--
48
--
nC
VDS=30V,ID=30A,
--
22
--
nC
VGS=10V
--
11
--
nC
--
5.2
--
nC
t d(on)
tr
t d(off)
tf
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=30V,
ID=30A,
RG=3Ω,
VGS=10V
--
11
--
ns
--
45
--
ns
--
34
--
ns
--
32
--
ns
Source- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated)
VSD
Forward on voltage
ISD=30A,VGS=0V
t rr
Reverse Recovery Time
Tj=25,Isd=30A,
VGS=0V
Q rr
Reverse Recovery Charge
di/dt=100A/μs
NOTE: Repetitive rating; pulse width limited by max junction temperature.
--
0.8
1.2
V
--
53
--
ns
--
51
--
nC
Limited by TJmax, starting TJ = 25°C, L = 0.5mH, RG = 25Ω, IAS = 20A, VGS =10V. Part not recommended for use above this value
The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C.
Pulse width ≤ 380μs; duty cycle≤ 2%.
CopyrightVanguard Semiconductor Co., Ltd
Rev A DEC, 2019
www.vgsemi.com


Part Number VSP003N06MS-G
Description N-Channel Advanced Power MOSFET
Maker Vanguard Semiconductor
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