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VSP003N06MS-G Datasheet

Manufacturer: Vanguard Semiconductor
VSP003N06MS-G datasheet preview

VSP003N06MS-G Details

Part number VSP003N06MS-G
Datasheet VSP003N06MS-G-VanguardSemiconductor.pdf
File Size 668.63 KB
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
VSP003N06MS-G page 2 VSP003N06MS-G page 3

VSP003N06MS-G Overview

Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Ⅱ Technology  100% Avalanche test  Pb-free lead plating; Symbol Parameter VSP003N06MS-G 60V/125A N-Channel Advanced Power MOSFET Condition Min. pulse width limited by max junction tempe.

VSP003N06MS-G Key Features

  • Enhancement mode
  • Low on-resistance RDS(on) @ VGS=4.5 V
  • VitoMOS® Ⅱ Technology
  • 100% Avalanche test
  • Pb-free lead plating; RoHS pliant
  • DEC, 2019

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