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Vanguard Semiconductor

VSP003N10HS-G Datasheet Preview

VSP003N10HS-G Datasheet

N-Channel Advanced Power MOSFET

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Features
N-Channel10V Logic Level Control
Enhancement mode
VitoMOS® Technology
Fast Switching and High efficiency
100% Avalanche Tested
Pb-free lead plating; RoHS compliant
VSP003N10HS-G
100V/125A N-Channel Advanced Power MOSFET
V DS
R @ DS(on),TYP VGS=10 V
ID
100 V
3.8 mΩ
125 A
PDFN5x6
Part ID
VSP003N10HS-G
Package Type
PDFN5x6
Marking
003N10H
Tape and reel
information
3000PCS/Reel
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
VGS
Drain-Source breakdown voltage
Gate-Source voltage
IS
Diode continuous forward current
ID
Continuous drain current @VGS=10V
IDM
Pulse drain current tested
IDSM
Continuous drain current @VGS=10V
EAS
Avalanche energy, single pulsed
PD
PDSM
Maximum power dissipation
Maximum power dissipation
TSTG , TJ Storage and Junction Temperature Range
Thermal Characteristics
Symbol
Parameter
RJC
Thermal Resistance, Junction-to-Case
RJA
Thermal Resistance, Junction-to-Ambient
TC =25°C
TC =25°C
TC =100°C
TC =25°C
TA=25°C
TA=70°C
TC =25°C
TA=25°C
Typical
1.1
30
Rating
100
±20
125
125
79
500
24
19
144
114
4.2
-55 to 150
Max
1.3
36
Unit
V
V
A
A
A
A
A
A
mJ
W
W
°C
Unit
°C/W
°C/W
CopyrightVanguard Semiconductor Co., Ltd
Rev A MAY, 2020
www.vgsemi.com




Vanguard Semiconductor

VSP003N10HS-G Datasheet Preview

VSP003N10HS-G Datasheet

N-Channel Advanced Power MOSFET

No Preview Available !

Electrical Characteristics
Symbol
Parameter
VSP003N10HS-G
100V/125A N-Channel Advanced Power MOSFET
Condition
Min. Typ. Max. Unit
Static Electrical Characteristics @ Tj=25°C (unless otherwise stated)
V(BR)DSS Drain-Source Breakdown Voltage
VGS=0V, ID=250μA 100
--
--
V
Zero Gate Voltage Drain Current
VDS=100V,VGS=0V
--
--
1
μA
IDSS
Zero Gate Voltage Drain Current( Tj =125) VDS=100V,VGS=0V
--
--
100
μA
IGSS
Gate-Body Leakage Current
VGS=±20V,VDS=0V
--
--
±100
nA
VGS(TH)
Gate Threshold Voltage
VDS=VGS,ID=250μA 2.3
3.3
3.9
V
RDS(ON) Drain-Source On-State Resistance
VGS=10V, ID=40A
--
3.8
4.8
Tj =100
--
5
--
Dynamic Electrical Characteristics @ Tj = 25°C (unless otherwise stated)
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Q gd
Gate-Drain Charge
Switching Characteristics
3100 3645 4190
pF
VDS=30V,VGS=0V,
1650 1940 2230
pF
f=1MHz
25
35
45
pF
f=1MHz
0.5
1.1
1.7
Ω
--
47
62
nC
VDS=50V,ID=40A,
--
18
24
nC
VGS=10V
--
8.5
13
nC
t d(on)
tr
t d(off)
tf
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=50V,
ID=40A,
RG=3Ω,
VGS=10V
--
15
--
ns
--
39
--
ns
--
27
--
ns
--
13
--
ns
Source- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated)
VSD
t rr
Q rr
Forward on voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=40A,VGS=0V
Tj=25,Isd=40A,
VGS=0V
di/dt=100A/μs
--
0.8
1.2
V
--
79
158
ns
--
118
236
nC
NOTE: Repetitive rating; pulse width limited by max junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.5mH, RG = 25Ω, IAS = 24A, VGS =10V. Part not recommended for use above this value
The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C.
Pulse width ≤ 380μs; duty cycle≤ 2%.
CopyrightVanguard Semiconductor Co., Ltd
Rev A MAY, 2020
www.vgsemi.com


Part Number VSP003N10HS-G
Description N-Channel Advanced Power MOSFET
Maker Vanguard Semiconductor
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