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Vanguard Semiconductor

VSP007N10MS-G Datasheet Preview

VSP007N10MS-G Datasheet

N-Channel Advanced Power MOSFET

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Features
Enhancement mode
Low on-resistance RDS(on) @ VGS=4.5 V
VitoMOS® Technology
100% Avalanche test
Pb-free lead plating; RoHS compliant
VSP007N10MS-G
100V/85A N-Channel Advanced Power MOSFET
V DS
R @ DS(on),TYP VGS=10 V
R @ DS(on),TYP VGS=4.5 V
ID
100 V
5.7 mΩ
7.5 mΩ
85
A
PDFN5x6
Part ID
VSP007N10MS-G
Package Type
PDFN5x6
Marking
007N10M
Tape and reel
information
3000PCS/Reel
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
VGS
Drain-Source breakdown voltage
Gate-Source voltage
IS
Diode continuous forward current
ID
Continuous drain current @VGS=10V
IDM
Pulse drain current tested
IDSM
Continuous drain current @VGS=10V
EAS
Avalanche energy, single pulsed
PD
PDSM
Maximum power dissipation
Maximum power dissipation
TSTG , TJ Storage and Junction Temperature Range
Thermal Characteristics
TC =25°C
TC =25°C
TC =100°C
TC =25°C
TA=25°C
TA=70°C
TC =25°C
TA=25°C
Symbol
Parameter
RJC
Thermal Resistance, Junction-to-Case
RJA
Thermal Resistance, Junction-to-Ambient
Rating
100
±20
85
85
54
340
21
17
56
69
4.2
-55 to 150
Typical
1.8
30
Unit
V
V
A
A
A
A
A
A
mJ
W
W
°C
Unit
°C/W
°C/W
CopyrightVanguard Semiconductor Co., Ltd
Rev A DEC, 2019
www.vgsemi.com




Vanguard Semiconductor

VSP007N10MS-G Datasheet Preview

VSP007N10MS-G Datasheet

N-Channel Advanced Power MOSFET

No Preview Available !

Electrical Characteristics
Symbol
Parameter
VSP007N10MS-G
100V/85A N-Channel Advanced Power MOSFET
Condition
Min. Typ. Max. Unit
Static Electrical Characteristics @ Tj=25°C (unless otherwise stated)
V(BR)DSS Drain-Source Breakdown Voltage
VGS=0V, ID=250μA 100
--
--
V
Zero Gate Voltage Drain Current
VDS=100V,VGS=0V
--
--
1
μA
IDSS
Zero Gate Voltage Drain Current( Tj =125) VDS=100V,VGS=0V
--
--
100
μA
IGSS
Gate-Body Leakage Current
VGS=±20V,VDS=0V
--
--
±100
nA
VGS(TH)
Gate Threshold Voltage
VDS=VGS,ID=250μA 1.5
1.9
2.5
V
RDS(ON) Drain-Source On-State Resistance
RDS(ON)
Drain-Source On-State Resistance
VGS=10V, ID=20A
--
5.7
8
Tj =100
--
7.5
--
VGS=4.5V, ID=15A
--
7.5
11
Dynamic Electrical Characteristics @ Tj = 25°C (unless otherwise stated)
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
Qg (10V) Total Gate Charge
Qg (4.5V) Total Gate Charge
Q gs
Gate-Source Charge
Q gd
Gate-Drain Charge
Switching Characteristics
2275 2680 3080
pF
VDS=30V,VGS=0V,
865 1020 1175
pF
f=1MHz
25
35
45
pF
f=1MHz
--
1.3
--
Ω
--
40
--
nC
VDS=50V,ID=20A,
--
20
--
nC
VGS=10V
--
9.3
--
nC
--
6.2
--
nC
t d(on)
tr
t d(off)
tf
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=50V,
ID=20A,
RG=3Ω,
VGS=10V
--
10.5
--
ns
--
19
--
ns
--
30
--
ns
--
11
--
ns
Source- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated)
VSD
Forward on voltage
ISD=20A,VGS=0V
t rr
Reverse Recovery Time
Tj=25,Isd=20A,
VGS=0V
Q rr
Reverse Recovery Charge
di/dt=100A/μs
NOTE: Repetitive rating; pulse width limited by max junction temperature.
--
0.8
1.2
V
--
46
--
ns
--
53
--
nC
Limited by TJmax, starting TJ = 25°C, L = 0.5mH, RG = 25Ω, IAS = 15A, VGS =10V. Part not recommended for use above this value
The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C.
Pulse width ≤ 380μs; duty cycle≤ 2%.
CopyrightVanguard Semiconductor Co., Ltd
Rev A DEC, 2019
www.vgsemi.com


Part Number VSP007N10MS-G
Description N-Channel Advanced Power MOSFET
Maker Vanguard Semiconductor
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