VSP007N10MS-G Description
Features Enhancement mode Low on-resistance RDS(on) @ VGS=4.5 V VitoMOS® Ⅱ Technology 100% Avalanche test Pb-free lead plating; Symbol Parameter VSP007N10MS-G 100V/85A N-Channel Advanced Power MOSFET Condition Min. pulse width limited by max junction.
VSP007N10MS-G Key Features
- Enhancement mode
- Low on-resistance RDS(on) @ VGS=4.5 V
- VitoMOS® Ⅱ Technology
- 100% Avalanche test
- Pb-free lead plating; RoHS pliant
- DEC, 2019