• Part: VSP018N10MS
  • Description: N-Channel Advanced Power MOSFET
  • Manufacturer: Vanguard Semiconductor
  • Size: 295.52 KB
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Datasheet Summary

Features - N-Channel - Enhancement mode - Very low on-resistance RDS(on) @ VGS=4.5 V - Fast Switching - 100% Avalanche Tested - Pb-free lead plating; RoHS pliant 100V/42A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=4.5 V ID 100 16.5 42 V mΩ A PDFN5x6 Part ID VSP018N10MS Package Type PDFN5x6 Marking 018N10M Tape and reel information 3000pcs/reel Maximum ratings, at T j=25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TA =100°C TC =25°C ID=16A IAS...