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Vishay Intertechnology Electronic Components Datasheet

GI1003 Datasheet

Ultra Fast Sinterglass Diode

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VISHAY
GI1001 / 1002 / 1003 / 1004
Vishay Semiconductors
Ultra Fast Sinterglass Diode
Features
• High temperature metallurgically bonded con-
struction
• Glass passivated cavity-free junction
• Superfast recovery time for high efficiency
• Low forward voltage, high current capability
• Hermetically sealed package
• High surge capability
Mechanical Data
Case: DO-204AP Sintered glass case
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 560 mg
17031
Parts Table
GI1001
Part
GI1002
GI1003
GI1004
Type differentiation
VRRM = 50 V
VRRM = 100 V
VRRM = 150 V
VRRM = 200 V
Package
DO-204AP(G-1)
DO-204AP(G-1)
DO-204AP(G-1)
DO-204AP(G-1)
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage = Repetitive
peak reverse voltage
see electrical characteristics
Maximum average forward
rectified current
Peak forward surge current
Operating junction and storage
temperature range
0.375 " (9.5 mm) lead length at
TL = 75 °C
8.3 ms single half sine-wave
superimposed on rated load
(JEDEC Method), at TL = 75 °C
Part
GI1001
GI1002
GI1003
GI1004
Symbol
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
IF(AV)
IFSM
Value
50
100
150
200
1.0
30
Unit
V
V
V
V
A
A
TJ, TSTG - 55 to + 175
°C
Document Number 86073
Rev. 1.3, 11-Aug-04
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

GI1003 Datasheet

Ultra Fast Sinterglass Diode

No Preview Available !

GI1001 / 1002 / 1003 / 1004
Vishay Semiconductors
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Parameter
Typical thermal resistance 1), 2) -
junction to ambient
Typical thermal resistance 1), 2) -
junction to lead
Test condition
Symbol
RθJA
RθJL
VISHAY
Value
65
20
Unit
K/W
K/W
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Maximum instantaneous
forward voltage 1)
IF = 1.0 A
Maximum reverse current
VR = VRRM, Tamb = 25 °C
VR = VRRM, Tamb = 100 °C
Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
Typical junction capacitance
VR = 4 V, f = 1 MHz
1) Pulse test: 300 µs pulse width, 1 % duty cycle
Symbol
VF
IR
IR
trr
Cj
Min
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Typ. Max Unit
0.975
V
2.0 µA
50 µA
25 ns
45 pF
1.5
0.8 x 0.8 x 0.4" Thick Copper Heatsink
(20 x 20 x 10mm)
TL
1.0
0.375" (9.5mm)
0.5
Resistive or
Inductive Load
0
0 25 50
75 100 125 150 175
ggi1001_01
Lead Temperature (°C)
Figure 1. Forward Current Derating Curve
30
8.3ms Single Half Sine-Wave
(JEDEC Method) at TL = 75°C
25
20
15
10
5.0
0
1
ggi1001_02
10
Number of Cycles at 60 HZ
100
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
Document Number 86073
Rev. 1.3, 11-Aug-04


Part Number GI1003
Description Ultra Fast Sinterglass Diode
Maker Vishay
Total Page 6 Pages
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