Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Key Features
Dynamic dV/dt rating.
Repetitive avalanche rated
Available.
175 °C operating temperature.
Fast switching
Available.
Ease of paralleling.
Simple drive requirements
Available.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912
Note.
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) t.
Full PDF Text Transcription for IRF540 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRF540. For precise diagrams, and layout, please refer to the original PDF.
www.vishay.com IRF540 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration...
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MMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 72 11 32 Single 0.077 ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated Available • 175 °C operating temperature • Fast switching Available • Ease of paralleling • Simple drive requirements Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) termina