IRF644S Datasheet | Vishay

FEATURES - Surface-mount - Available in tape and reel - Dynamic dv/dt rating Available - Repetitive avalanche rated - Fast switching Available - Ease of paralleling - Simple drive requirements - Material categorization: for definitions of pliance please see .vishay./doc?99912 Note - This datasheet provides information about parts that are Ro HS-pliant and / or parts that are non Ro HS-pliant. For example, parts with lead (Pb) terminations are not Ro HS-pliant. Please see the information / tables in this datasheet for details DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface-mount power package capable of acmodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface-mount application. ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Lead (Pb)-free Note a. See device orientation D2PAK (TO-263) Si HF644S-GE3 IRF644SPb F D2PAK (TO-263) Si HF644STRL-GE3 a IRF644STRLPb F a D2PAK (TO-263) Si HF644STRR-GE3 a IRF644STRRPb F a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor Linear derating factor (PCB mount) e Single pulse avalanche energy b Avalanche current a Repetitive avalanche energy a Maximum power dissipation Maximum power dissipation (PCB mount) e Peak diode recovery dv/dt c VGS at 10 V TC = 25 °C TC = 100 °C TC = 25 °C TA = 25 °C EAS IAR EAR PD dv/dt Operating junction and storage temperature range Soldering remendations (peak temperature) d for 10 s TJ,...