IRF644A Overview
Key Features
- Avalanche Rugged Technology
- Rugged Gate Oxide Technology
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area
- Lower Leakage Current: 10mA (Max.) @ VDS = 250V
- Lower RDS(ON): 0.214Ω (Typ.)
| Part | IRF644A |
|---|---|
| Description | N-Channel Mosfet Transistor |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 40.38 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IRF644A | Fairchild Semiconductor | Advanced Power MOSFET |
| IRF644S | International Rectifier | Power MOSFET |
| IRF644 | International Rectifier | Power MOSFET |
| IRF644B | Fairchild Semiconductor | 250V N-Channel MOSFET |
| IRF644B | onsemi | N-Channel BFET MOSFET |