Part IRF640FI
Description N-Channel Mosfet Transistor
Category MOSFET
Manufacturer Inchange Semiconductor
Size 60.17 KB
Inchange Semiconductor

IRF640FI Overview

Description

Designed for use in switch mode power supplies and general purpose applications. SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 200 ±20 V V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pluse 40 A PD Total Dissipation @TC=25℃ 40 W TJ Max.

Key Features

  • Low RDS(on) = 0.180Ω(TYP)
  • Lower Input Capacitance
  • Improved Gate Charge
  • Extended Safe Operating Area
  • Rugged Gate Oxide Technology