Key Features
- Static drain-source on-resistance: RDS(on) ≤150mΩ
- Enhancement mode
- Fast Switching Speed
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- Efficient and reliable device for use in a wide variety of applications
Datasheets by Manufacturer
- IRF640NPBF — International Rectifier — Power MOSFET
- IRF640NL — International Rectifier — Power MOSFET
- IRF640NS — International Rectifier — Power MOSFET
- IRF640NLPBF — International Rectifier — Power MOSFET
- IRF640NSPBF — International Rectifier — Power MOSFET
- IRF640S — International Rectifier — Power MOSFET
- IRF640L — Vishay — Power MOSFET
- IRF640 — Fairchild Semiconductor — 200V N-Channel MOSFET
- IRF640 — WEITRON — N-Channel Enhancement Mode POWER MOSFET
- IRF640 — STMicroelectronics — N-Channel MOSFET
