IRF640 Description
N-Channel Enhancement Mode POWER MOSFET P b Lead(Pb)-Free 3 DRAIN.
IRF640 Key Features
- Super High Dense Cell Design For Low RDS(ON)
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speed
- Linear Transfer Characteristics
- High Input Impedance
- 55~+150