IRF640
IRF640 is manufactured by WEITRON.
N-Channel Enhancement Mode POWER MOSFET
P b Lead(Pb)-Free
3 DRAIN
Features
:
1 GATE
- Super High Dense Cell Design For Low RDS(ON)
R DS(ON) <0.18 Ω@V GS =10V
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speed
- Linear Transfer Characteristics
- High Input Impedance
2 SOURCE
DRAIN CURRENT 18 AMPERES
DRAIN SOURCE VOLTAGE 200 VOLTAGE
1 2 3
1. GATE 2. DRAIN 3. SOURCE
TO-220AB
Maximum Ratings(Ta=25 C Unless Otherwise Specified)
Rating Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current, (VGS@10V, TC=25˚C)
, (VGS@10V, TC=100˚C) Pulsed Drain Current
Total Power Dissipation(TC=25˚C) Thermal Resistance Junction-case...
