| Part Number | IRF640 Datasheet |
|---|---|
| Manufacturer | WEITRON |
| Overview | N-Channel Enhancement Mode POWER MOSFET P b Lead(Pb)-Free 3 DRAIN Features: 1 GATE *Super High Dense Cell Design For Low RDS(ON) R DS(ON) <0.18 Ω@V GS =10V * Single Pulse Avalanche Energy Rated . 1 GATE *Super High Dense Cell Design For Low RDS(ON) R DS(ON) <0.18 Ω@V GS =10V * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speed * Linear Transfer Characteristics * High Input Impedance 2 SOURCE IRF640 DRAIN CURRENT 18 AMPERES DRAIN SOU. |
IRF640 Datasheet and Specifications PDF
The IRF640 is a N-Channel Enhancement Mode POWER MOSFET.
| Part Number | IRF640 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | STMicroelectronics |
| Overview | This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various . oC Drain Current (pulsed) T otal Dissipation at T c = 25 oC Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature 18 11 72 125 1.0 5 -65 to 150 150 200 200 ± 20 18(**) 11(**) 72 40 0.32 5 2000 Value IRF 640F P V. |
| Part Number | IRF640 Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Vishay |
| Overview |
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is.
* Dynamic dV/dt rating * Repetitive avalanche rated Available * Fast switching * Ease of paralleling Available * Simple drive requirements * Material categorization: for definitions of compliance please see Available Note * This datasheet provides information about p. |
| Part Number | IRF640 Datasheet |
|---|---|
| Description | 200V N-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
IRF640, RF1S640, RF1S640SM
Data Sheet January 2002
18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced po.
* 18A, 200V * rDS(ON) = 0.180Ω * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speed * Linear Transfer Characteristics * High Input Impedance * Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Inform. |