Datasheet Details
| Part number | IRF640NS |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 236.22 KB |
| Description | Power MOSFET |
| Datasheet | IRF640NS_InternationalRectifier.pdf |
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Overview: l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive.
| Part number | IRF640NS |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 236.22 KB |
| Description | Power MOSFET |
| Datasheet | IRF640NS_InternationalRectifier.pdf |
|
|
|
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all mercial-industrial applications at power dissipation levels to approximately 50 watts.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRF640NS | N-Channel MOSFET | INCHANGE |
|
IRF640N | N-Channel MOSFET | INCHANGE |
|
IRF640NL | N-Channel MOSFET | INCHANGE |
 |
IRF640 | N-channel TrenchMOS transistor | NXP |
 |
IRF640 | N-Channel MOSFET | STMicroelectronics |
| Part Number | Description |
|---|---|
| IRF640NSPBF | Power MOSFET |
| IRF640N | Power MOSFET |
| IRF640NL | Power MOSFET |
| IRF640NLPBF | Power MOSFET |
| IRF640NPBF | Power MOSFET |
| IRF640 | Power MOSFET |
| IRF640L | Power MOSFET |
| IRF640S | Power MOSFET |
| IRF644 | Power MOSFET |
| IRF644 | Power MOSFET |