IRF640T Datasheet (PDF) Download
STMicroelectronics
IRF640T

Description

This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.

Key Features

  • VDSS 200V RDS(on) <0.16Ω ID 15A Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances TO-220 3 1 2