IRF640T
Description
This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.
Key Features
- VDSS 200V RDS(on) <0.16Ω ID 15A Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances TO-220 3 1 2