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IRF640T - N-CHANNEL POWER MOSFETS

General Description

This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process.

This technology matches and improves the performances compared with standard parts from various sources.

Switching application Order codes Part nu

Key Features

  • Type IRF640T.
  • VDSS 200V RDS(on).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com IRF640T N-channel 200V - 0.15Ω - 15A - TO-220 MESH OVERLAY™ Power MOSFET General features Type IRF640T ■ ■ ■ VDSS 200V RDS(on) <0.16Ω ID 15A Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances TO-220 3 1 2 Description This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. Internal schematic diagram Applications ■ Switching application Order codes Part number IRF640T Marking IRF640T Package TO-220 Packaging Tube October 2006 Rev 1 1/12 www.st.com 12 DataSheet 4 U .com www.DataSheet4U.com Contents IRF640T Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . .