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IRF640A Datasheet N-channel Power MOSFET

Manufacturer: Nell Power Semiconductor

Overview: SEMICONDUCTOR IRF640 Series RRooHHSS.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

Nell High Power Products N-Channel Power MOSFET (18A, 200Volts) The Nell IRF640 are N-channel enhancement mode silicon gate power field effect transistors.

They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation.

They are designed as an extremely efficient and reliable device for use in a wide variety of applications such as switching regulators, convertors, motor drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Key Features

  • RDS(ON) = 0.180Ω @ VGS = 10V Ultra low gate charge(63nC max. ) Low reverse transfer capacitance (CRSS = 91pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (IRF640A) D G D S TO-263(D2PAK) (IRF640H) D (Drain).

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