| Part Number | IRF640A Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview | Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @. Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 Ω(Typ.) 1 2 3 IRF640A BVDSS = 200 V RDS(on) = 0.18 Ω ID = 18 A TO-220 1.Gate 2. Drain 3. Source. |
IRF640A Datasheet and Specifications PDF
The IRF640A is a Advanced Power MOSFET.
| Part Number | IRF640A Datasheet |
|---|---|
| Description | N-Channel Mosfet Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-C.
*Low RDS(on) = 0.144Ω(TYP) *Lower Input Capacitance *Improved Gate Charge *Extended Safe Operating Area *Rugged Gate Oxide Technology DESCRIPTION *Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS. |
| Part Number | IRF640A Datasheet |
|---|---|
| Description | N-Channel Power MOSFET |
| Manufacturer | Nell Power Semiconductor |
| Overview | Nell High Power Products N-Channel Power MOSFET (18A, 200Volts) The Nell IRF640 are N-channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed t. RDS(ON) = 0.180Ω @ VGS = 10V Ultra low gate charge(63nC max.) Low reverse transfer capacitance (CRSS = 91pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (IRF640A) D G D S TO-263(D2PAK) (IRF640H) D (Drain) . |