The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.vishay.com
IRF640S, IRF640L, SiHF640S, SiHF640L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
200 VGS = 10 V
70 13 39 Single
0.18
I2PAK (TO-262)
D2PAK (TO-26
D
G
DS G
D S
G
S N-Channel MOSFET
FEATURES
• Surface mount
• Low-profile through-hole
• Available in tape and reel
Available
• Dynamic dV/dt rating
• 150 °C operating temperature
Available
• Fast switching
• Fully avalanche rated
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.