IRF640S Overview
Description
This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.
| Part | IRF640S |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | STMicroelectronics |
| Size | 84.23 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IRF640S | International Rectifier | Power MOSFET |
| IRF640S | NXP Semiconductors | N-channel TrenchMOS transistor |
| IRF640S | Vishay | Power MOSFET |
| IRF640N | International Rectifier | Power MOSFET |
| IRF640N | Inchange Semiconductor | N-Channel MOSFET |