STMicroelectronics IRF640S
This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.| Part No. | IRF640S |
|---|---|
| Datasheet | IRF640S Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
D2PAK TO-263 (suffix ”T4”)APPLICATIONS
s HIGH CURRENT SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT. INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID I DM (● ) P tot dv/dt( 1) Ts tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o Value 200 200 ± 20 18 11 72 125 1.0 5 -65 to 150 150 ( 1) ISD ≤ 18A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Un it V V V A A A W W /o C V/ns o o C C (●) Pulse width limited by safe operating area September 1999 1/8 IRF640S THERMAL DATA 3.12 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient...
