IRF640S - N-Channel MOSFET

STMicroelectronics

General Description

This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY™ process.

This technology matches and improves the performances compared with standard parts from various sources.

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IRF640S n-channel mosfet by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	IRF640S
Manufacturer	STMicroelectronics
File Size	84.23 KB
Description	N-Channel MOSFET
Datasheet	IRF640S Datasheet

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Other Datasheets by STMicroelectronics

Part Number	Description
IRF640	N-Channel MOSFET
IRF640FP	N-Channel MOSFET
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IRF621	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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® IRF640S N - CHANNEL 200V - 0.150Ω - 18A TO-263 MESH OVERLAY ™ MOSFET TYPE IRF640S s s s s V DSS 200 V R DS(on) < 0.18 Ω ID 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 1 DESCRIPTION This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. D2PAK TO-263 (suffix ”T4”) APPLICATIONS s HIGH CURRENT SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.