Part IRF640S
Description N-channel TrenchMOS transistor
Category Transistor
Manufacturer NXP Semiconductors
Size 95.10 KB
NXP Semiconductors

IRF640S Overview

Description

N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c.

Key Features

  • Low on-state resistance
  • Fast switching
  • Low SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 16 A g RDS(ON) ≤ 180 mΩ s