IRF644N - Power MOSFET

Vishay

General Description

Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

Advanced Process Technology.
Dynamic dV/dt Rating.
175 °C Operating Temperature.
Fast Switching.
Fully Avalanche Rated.
Ease of Paralleling.
Simple Drive Requirements.
Lead (Pb)-free Available Available RoHS.

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IRF644N power mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	IRF644N
Manufacturer	Vishay
File Size	124.68 KB
Description	Power MOSFET
Datasheet	IRF644N Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
IRF644N	Power MOSFET	International Rectifier
IRF644NL	Power MOSFET	International Rectifier
IRF644NPbF	Power MOSFET	International Rectifier
IRF644NS	Power MOSFET	International Rectifier
IRF644	Power MOSFET	International Rectifier

Other Datasheets by Vishay

Part Number	Description
IRF644NL	Power MOSFET
IRF644NS	Power MOSFET
IRF644	Power MOSFET
IRF644S	Power MOSFET
IRF640	Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) 250 V RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 54 Qgs (nC) 9.2 Qgd (nC) 26 Configuration Single 0.240 I2PAK (TO-262) TO-220 D S D G D2PAK (TO-263) S D G G GD S S N-Channel MOSFET FEATURES • Advanced Process Technology • Dynamic dV/dt Rating • 175 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.