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IRF644N Datasheet PDF

Vishay IRF644N

This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
Part No. IRF644N
Datasheet IRF644N Download
Manufacturer
Vishay
Description Power MOSFET
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IRF644N datasheet page 1 preview

FEATURES

● Advanced Process Technology
● Dynamic dV/dt Rating
● 175 °C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Ease of Paralleling
● Simple Drive Requirements
● Lead (Pb)-free Available Available RoHS* COMPLIANT

DESCRIPTION

Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION Package TO-220 D2PAK (TO-263) Lead (Pb)-free IRF644NPbF SiHF644N-E3 IRF644NSPbF SiHF644NS-E3 SnPb IRF644N SiHF644N Note a.
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