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IRF644NS - Power MOSFET

Download the IRF644NS datasheet PDF. This datasheet also covers the IRF644N variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • Advanced Process Technology.
  • Dynamic dV/dt Rating.
  • 175 °C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Ease of Paralleling.
  • Simple Drive Requirements.
  • Lead (Pb)-free Available Available RoHS.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF644N-Vishay.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRF644NS Power MOSFET International Rectifier
IRF644N Power MOSFET International Rectifier
IRF644NL Power MOSFET International Rectifier
IRF644NPbF Power MOSFET International Rectifier
IRF644 Power MOSFET International Rectifier

Other Datasheets by Vishay

Part Number Description
IRF644N Power MOSFET
IRF644NL Power MOSFET
IRF644 Power MOSFET
IRF644S Power MOSFET
IRF640 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) 250 V RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 54 Qgs (nC) 9.2 Qgd (nC) 26 Configuration Single 0.240 I2PAK (TO-262) TO-220 D S D G D2PAK (TO-263) S D G G GD S S N-Channel MOSFET FEATURES • Advanced Process Technology • Dynamic dV/dt Rating • 175 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.