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IRF640 - N-Channel MOSFET Transistor

General Description

Drain Current ID= 18A@ TC=25℃ Drain Source Voltage- : VDSS= 200V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) Fast Switching Speed Low Drive Requirement APPLICATIONS Designed for low voltage, high speed power switching applications such as swi

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF640 DESCRIPTION ·Drain Current –ID= 18A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) ·Fast Switching Speed ·Low Drive Requirement APPLICATIONS ·Designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 18 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max.