IRF640
Description
Drain Current -ID= 18A@ TC=25℃ Drain Source Voltage- : VDSS= 200V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) Fast Switching Speed Low Drive Requirement.
- Part: IRF640
- Description: N-Channel MOSFET Transistor
- Category: MOSFET
- Manufacturer: Inchange Semiconductor
- Size: 140.84 KB
Datasheets by Manufacturer
- IRF640 — NXP Semiconductors — N-channel TrenchMOS transistor
- IRF640NSPBF — International Rectifier — Power MOSFET
- IRF640 — Comset Semiconductors — N-Channel Enhancement Mode Power MOS Transistors
- IRF640PbF — Vishay — Power MOSFET
- IRF640B — Fairchild Semiconductor — 200V N-Channel MOSFET
- IRF640FP — STMicroelectronics — N-Channel MOSFET
- IRF640 — Nell Power Semiconductor — N-Channel Power MOSFET
- IRF640A — Nell Power Semiconductor — N-Channel Power MOSFET
- IRF643 — Fairchild Semiconductor — N-Channel Power MOSFET
- IRF644 — Vishay — Power MOSFET