IRF640
Description
Drain Current -ID= 18A@ TC=25℃ Drain Source Voltage- : VDSS= 200V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) Fast Switching Speed Low Drive Requirement.
- Part: IRF640
- Description: N-Channel MOSFET Transistor
- Category: MOSFET
- Manufacturer: Inchange Semiconductor
- Size: 140.84 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| IRF640 | NXP Semiconductors | N-channel TrenchMOS transistor |
| IRF640NSPBF | International Rectifier | Power MOSFET |
| IRF640 | Comset Semiconductors | N-Channel Enhancement Mode Power MOS Transistors |
| IRF640PbF | Vishay | Power MOSFET |
| IRF640B | Fairchild Semiconductor | 200V N-Channel MOSFET |
| IRF640FP | STMicroelectronics | N-Channel MOSFET |
| IRF640 | Nell Power Semiconductor | N-Channel Power MOSFET |
| IRF640A | Nell Power Semiconductor | N-Channel Power MOSFET |
| IRF643 | Fairchild Semiconductor | N-Channel Power MOSFET |
| IRF644 | Vishay | Power MOSFET |