IRF647 Overview
Key Features
- Avalanche Rugged Technology
- Rugged Gate Oxide Technology
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area
- Lower Leakage Current: 10mA (Max.) @ VDS = 250V
| Part | IRF647 |
|---|---|
| Description | N-Channel Mosfet Transistor |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 40.28 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IRF640N | International Rectifier | Power MOSFET |
| IRF640N | Inchange Semiconductor | N-Channel MOSFET |
| IRF644S | International Rectifier | Power MOSFET |
| IRF640 | STMicroelectronics | N-Channel MOSFET |
| IRF640 | WEITRON | N-Channel Enhancement Mode POWER MOSFET |