IRF645 Datasheet (PDF) Download
Inchange Semiconductor
IRF645

Key Features

  • Avalanche Rugged Technology
  • Rugged Gate Oxide Technology
  • Lower Input Capacitance
  • Improved Gate Charge
  • Extended Safe Operating Area
  • Lower Leakage Current: 10mA (Max.) @ VDS = 250V
  • DESCRITION
  • Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.