Key Features
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10mA (Max.) @ VDS = 250V
DESCRITION
Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
Datasheets by Manufacturer
IRF640 — NXP Semiconductors — N-channel TrenchMOS transistorIRF643 — Fairchild Semiconductor — N-Channel Power MOSFETIRF640NSPBF — International Rectifier — Power MOSFETIRF640 — Comset Semiconductors — N-Channel Enhancement Mode Power MOS TransistorsIRF640PbF — Vishay — Power MOSFETIRF644 — Vishay — Power MOSFETIRF644NS — Vishay — Power MOSFETIRF642 — GE — FIELD EFFECT POWER TRANSISTORIRF640B — Fairchild Semiconductor — 200V N-Channel MOSFETIRF640FP — STMicroelectronics — N-Channel MOSFET
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