GE IRF642
FIELD EFFECT POWER TRANSISTOR
FEATURES
● Polysilicon gate - Improved stability and reliability● No secondary breakdown - Excellent ruggedness
● Ultra-fast switching - Independent of temperature
● Voltage controlled - High transconductance
● Low input capacitance - Reduced drive requirement
● Excellent thermal stability - Ease of paralleling N-CHANNEL . -f- t'-I..,197001(44..38231I .