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IRF644B Datasheet N-channel Bfet MOSFET

Manufacturer: onsemi

Overview: IRF644B — N-Channel BFET MOSFET IRF644B N-Channel BFET MOSFET 250 V, 14 A, 280.

General Description

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.

Key Features

  • 14 A, 250 V, RDS(on) = 280 mΩ @ VGS = 10 V.
  • Low gate charge (Typ. 47 nC).
  • Low Crss (Typ. 30 pF).
  • Fast Switching.
  • 100% Avalanche Tested.
  • Improved dv/dt Capability D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage.

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