IRF644B Overview
Description
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 14 A, 250 V, RDS(on) = 280 mΩ @ VGS = 10 V
- Low gate charge (Typ. 47 nC)
- Low Crss (Typ. 30 pF)
- Fast Switching
- 100% Avalanche Tested
- Improved dv/dt Capability D GDS TO-220 G
