Datasheet4U Logo Datasheet4U.com

IRF644A - Advanced Power MOSFET

Key Features

  • Avalanche Rugged Technology.
  • Rugged Gate Oxide Technology.
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • Lower Leakage Current: 10µA (Max. ) @ VDS = 250V.
  • Lower RDS(ON): 0.214Ω (Typ. ) 1 2 3 IRF644A BVDSS = 250 V RDS(on) = 0.28Ω ID = 14 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF644A N-Channel Mosfet Transistor Inchange Semiconductor
IRF644 Power MOSFET International Rectifier
IRF644 Power MOSFET International Rectifier
IRF644 Power MOSFET Vishay
IRF644B N-Channel BFET MOSFET ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
IRF644 250V N-Channel MOSFET
IRF644B 250V N-Channel MOSFET
IRF640 200V N-Channel MOSFET
IRF640A Advanced Power MOSFET
IRF640B 200V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Lower RDS(ON): 0.214Ω (Typ.) 1 2 3 IRF644A BVDSS = 250 V RDS(on) = 0.28Ω ID = 14 A TO-220 1.Gate 2. Drain 3.