| Part Number | IRF644B Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o.
* * * * * * 14A, 250V, RDS(on) = 0.28Ω @VGS = 10 V Low gate charge ( typical 47 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt. |
IRF644B Datasheet and Specifications PDF
The IRF644B is a 250V N-Channel MOSFET.
| Part Number | IRF644B Datasheet |
|---|---|
| Description | N-Channel BFET MOSFET |
| Manufacturer | onsemi |
| Overview |
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to min.
* 14 A, 250 V, RDS(on) = 280 mΩ @ VGS = 10 V * Low gate charge (Typ. 47 nC) * Low Crss (Typ. 30 pF) * Fast Switching * 100% Avalanche Tested * Improved dv/dt Capability D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TS. |