Datasheet4U Logo Datasheet4U.com

IRFBC20S - Power MOSFET

General Description

G G D S G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a.

See device orientation.

D2PAK (TO-263) SiHFBC20S-GE3 IRFBC20SPbF SiHFBC20S-E3 D2PAK (TO-263) SiHFBC20STRL-GE3a IRFBC20STRLPbFa SiHFBC20STL-E3a I2PAK (TO-262) SiHFBC20L-GE3 IRFBC20LPbF SiHFBC20L-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Pulsed Drain Currenta, e Linear Derating Factor Single Pulse Avalanche Energyb, e Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc, e TA = 25 °C TC = 25 °C VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR PD dV/dt LIMIT 600 ± 20 2.2 1.4

Overview

IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 18 3.0 8.9 Single D 600 4.4 • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC20S, SiHFBC20S) • Low-Profile Through-Hole (IRFBC20L, SiHFBC20L) • Available in Tape and Reel (IRFBC20, SiiHFBC20S) • Dynamic dV/dt Rating • 150 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Compliant to RoHS Directive 2002/95/EC Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4.

It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.

Key Features

  • I2PAK (TO-262) D2PAK (TO-263).