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IRFBC20L - Power MOSFET

General Description

Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4.

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Other Datasheets by International Rectifier (now Infineon)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 9.1014 PRELIMINARY l l l l l l l IRFBC20S/L HEXFET® Power MOSFET D Surface Mount (IRFBC20S) Low-profile through-hole (IRFBC20L) Available in Tape & Reel (IRFBC20S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 600V RDS(on) = 4.4Ω G ID = 2.2A S Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package.