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IRFD020 - Power MOSFET

Datasheet Summary

Description

The HVMDIP technology is the key to Vishay’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of the HVMDIP design achieves very low on-state resistance combined with high transconductance and extreme device ruggedness.

Features

  • For Automatic Insertion.
  • Compact, End Stackable.
  • Fast Switching.
  • Ease of Paralleling.
  • Excellent Temperature Stability.
  • Compliant to RoHS Directive 2002/95/EC Available RoHS.

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Datasheet preview – IRFD020

Datasheet Details

Part number IRFD020
Manufacturer Vishay
File Size 241.79 KB
Description Power MOSFET
Datasheet download datasheet IRFD020 Datasheet
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Full PDF Text Transcription

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Power MOSFET IRFD020, SiHFD020 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 50 VGS = 10 V 24 7.1 7.1 Single 0.10 HVMDIP D S G D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • For Automatic Insertion • Compact, End Stackable • Fast Switching • Ease of Paralleling • Excellent Temperature Stability • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION The HVMDIP technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HVMDIP design achieves very low on-state resistance combined with high transconductance and extreme device ruggedness.
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