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IRFD123 Datasheet Power MOSFET

Manufacturer: Vishay

Overview: Power MOSFET IRFD123, SiHFD123 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 16 4.4 7.7 Single D 0.

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers.

The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

Key Features

  • Dynamic dV/dt Rating.
  • Repetitive Avalanche Rated.
  • For Automatic Insertion.
  • End Stackable.
  • 175 °C Operating Temperature.
  • Fast Switching.
  • Ease of Paralleling.
  • Compliant to RoHS Directive 2002/95/EC Available RoHS.