Datasheet Details
| Part number | IRFD123 |
|---|---|
| Manufacturer | Vishay |
| File Size | 1.79 MB |
| Description | Power MOSFET |
| Download | IRFD123 Download (PDF) |
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Overview: Power MOSFET IRFD123, SiHFD123 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 16 4.4 7.7 Single D 0.
| Part number | IRFD123 |
|---|---|
| Manufacturer | Vishay |
| File Size | 1.79 MB |
| Description | Power MOSFET |
| Download | IRFD123 Download (PDF) |
|
|
|
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers.
The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| IRFD123 | N-Channel MOSFET | Siliconix | |
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IRFD123 | MOSFET | Motorola |
| IRFD123 | N-Channel Power MOSFET | Harris Semiconductor | |
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IRFD123 | N-Channel Power MOSFET | International Rectifier |
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IRFD123 | (IRFD122) Field Effect Power Transistor | General Electric Solid State |
| Part Number | Description |
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