IRFD9120 Key Features
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- For Automatic Insertion
- End Stackable
- P-Channel
- 175 °C Operating Temperature
- Fast Switching
- pliant to RoHS Directive 2002/95/EC
- Part: IRFD9120
- Manufacturer: Vishay (official site)
- Size: 1.60 MB
Other IRFD9120 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
TEMIC Semiconductors |
IRFD9120 | P-Channel MOSFET |
Intersil |
IRFD9120 | P-Channel Power MOSFET |
International Rectifier |
IRFD9120 | Power MOSFET |
|
International Rectifier |
IRFD9120PbF | Power MOSFET |
IRFD9120 Description
Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple binations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1.