IRFD9120 Overview
IRFD9120 Data Sheet July 1999 File Number 2285.3 1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers,...
IRFD9120 Key Features
- 1.0A, 100V
- rDS(ON) = 0.6Ω
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
