Datasheet Summary
Power MOSFET
IRFD9120, SiHFD9120
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
- 100 VGS =
- 10 V
18 3.0 9.0 Single
HVMDIP
D P-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
Features
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- For Automatic Insertion
- End Stackable
- P-Channel
- 175 °C Operating Temperature
- Fast Switching
- pliant to RoHS Directive 2002/95/EC
Available
RoHS-
PLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4...
