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IRFI510G Datasheet

Manufacturer: Vishay
IRFI510G datasheet preview

Datasheet Details

Part number IRFI510G
Datasheet IRFI510G-Vishay.pdf
File Size 741.29 KB
Manufacturer Vishay
Description Power MOSFET
IRFI510G page 2 IRFI510G page 3

IRFI510G Overview

Third Generation Power MOSFETs from Vishay provides the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in mercial-industrial applications. The moulding pound used provides a high isolation capability and a low between the tab and external heatsink.

IRFI510G Key Features

  • Isolated Package
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s
  • Sink to Lead Creepage Distance = 4.8 mm
  • 175 °C Operating Temperature
  • Dynamic dV/dt Rating
  • Low Thermal Resistance
  • Lead (Pb)-free Available

IRFI510G from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
International Rectifier Logo IRFI510G Power MOSFET International Rectifier
INCHANGE Logo IRFI510G N-Channel MOSFET INCHANGE
Fairchild Semiconductor Logo IRFI510 Advanced Power MOSFET Fairchild Semiconductor
Fairchild Semiconductor Logo IRFI510A Advanced Power MOSFET Fairchild Semiconductor
Vishay logo - Manufacturer

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IRFI510G Distributor

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