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IRFI510G - Power MOSFET

Description

Third Generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.

Features

  • Isolated Package.
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RoHS.
  • Sink to Lead Creepage Distance = 4.8 mm.

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Full PDF Text Transcription

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Power MOSFET IRFI510G, SiHFI510G Vishay Siliconix PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 8.3 2.3 3.8 Single 0.54 TO-220 FULLPAK D GDS G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RoHS* • Sink to Lead Creepage Distance = 4.8 mm COMPLIANT • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available DESCRIPTION Third Generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
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