IRFI510G
IRFI510G is Power MOSFET manufactured by Vishay.
Power MOSFET
IRFI510G, SiHFI510G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
VGS = 10 V
Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
8.3 2.3 3.8 Single
TO-220 FULLPAK
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
Features
- Isolated Package
- High Voltage Isolation = 2.5 kVRMS (t = 60 s;
Available f = 60 Hz)
RoHS-
- Sink to Lead Creepage Distance = 4.8 mm
PLIANT
- 175 °C Operating Temperature
- Dynamic dV/dt Rating
- Low Thermal Resistance
- Lead (Pb)-free Available
DESCRIPTION
Third Generation Power MOSFETs from Vishay provides the designer with the best bination of fast switching, ruggedized device design,...
