IRFI510G Datasheet | Vishay

FEATURES - Isolated Package - High Voltage Isolation = 2.5 k VRMS (t = 60 s; Available f = 60 Hz) Ro HS- - Sink to Lead Creepage Distance = 4.8 mm PLIANT - 175 °C Operating Temperature - Dynamic d V/dt Rating - Low Thermal Resistance - Lead (Pb)-free Available DESCRIPTION Third Generation Power MOSFETs from Vishay provides the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in mercial-industrial applications. The moulding pound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. TO-220 FULLPAK IRFI510GPb F Si HFI510G-E3 IRFI510G Si HFI510G ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VGS ID IDM Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc TC = 25 °C EAS IAR EAR PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 4.4 m H, RG = 25 Ω, IAS = 4.5 A (see fig. 12). c. ISD ≤ 5.6 A, d I/dt ≤ 75 A/μs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. - Pb containing terminations are not Ro HS pliant, exemptions may apply LIMIT ± 20 4.5 3.2 18 0.18 60 4.5 2.7 27 4.5 - 55 to + 175 300d 10 1.1 UNIT V W/°C m J A m J W V/ns °C lbf - in N-...