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Vishay Intertechnology Electronic Components Datasheet

IRFI510G Datasheet

Power MOSFET

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Power MOSFET
IRFI510G, SiHFI510G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
100
RDS(on) (Ω)
VGS = 10 V
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
8.3
2.3
3.8
Single
0.54
TO-220 FULLPAK
D
GDS
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s;
Available
f = 60 Hz)
RoHS*
• Sink to Lead Creepage Distance = 4.8 mm
COMPLIANT
• 175 °C Operating Temperature
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available
DESCRIPTION
Third Generation Power MOSFETs from Vishay provides the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost
effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
TO-220 FULLPAK
IRFI510GPbF
SiHFI510G-E3
IRFI510G
SiHFI510G
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 4.4 mH, RG = 25 Ω, IAS = 4.5 A (see fig. 12).
c. ISD 5.6 A, dI/dt 75 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
± 20
4.5
3.2
18
0.18
60
4.5
2.7
27
4.5
- 55 to + 175
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Document Number: 90178
S-Pending-Rev. A, 16-Jun-08
WORK-IN-PROGRESS
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

IRFI510G Datasheet

Power MOSFET

No Preview Available !

IRFI510G, SiHFI510G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
65
5.5
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
ΔVDS/TJ
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VDS = VGS, ID = 250 µA
VGS = ± 20
VDS = 100 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 2.7 Ab
VDS = 50 V, ID = 2.7 Ab
Input Capacitance
Ciss VGS = 0 V
Output Capacitance
Coss
VDS = 25 V
Reverse Transfer Capacitance
Crss f = 1.0 MHz, see fig. 5
Drain to Sink Capacitance C f = 1.0 MHz
MIN. TYP. MAX. UNIT
100 -
-V
- 0.63 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25
µA
- - 250
-
-
0.54
Ω
1.2 -
-S
- 180 -
- 81 -
pF
- 15 -
- 12 -
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
LS
IS
ISM
VGS = 10 V
ID = 5.6 A, VDS = 80 V,
see fig. 6 and 13b
VDD = 50 V, ID = 5.6 A
RG = 24 Ω, RD = 8.4 Ω, see fig. 10b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
-
-
-
-
-
-
-
-
-
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
G
S
-
-
- 8.3
- 2.3 nC
- 3.8
6.9 -
16 -
ns
15 -
9.4 -
4.5 -
nH
7.5 -
- 4.5
A
- 18
Body Diode Voltage
VSD TJ = 25 °C, IS = 4.5 A, VGS = 0 Vb - - 2.5 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = 5.6 A, di/dt = 100 A/µsb
-
100 200 ns
Qrr - 0.44 0.88 µC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
www.vishay.com
2
Document Number: 90178
S-Pending-Rev. A, 16-Jun-08


Part Number IRFI510G
Description Power MOSFET
Maker Vishay
Total Page 8 Pages
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